A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors
نویسندگان
چکیده
CMOS poly-Si thin-film transistors (TFTs) were fabricated through crystallization and GILD processes by a novel selected area laser assisted (SALA) system. The system enables a local area irradiation of small beams of a pulsed solid-state laser of frequency tripled Nd:YAG. The novel TFT process eliminated 3 doping mask steps of the conventional process. On-off current ratios for both types of poly-Si TFTs were improved by SALA. The field effect mobility of nand p-channel TFTs is 84 cm2/Vs and 75 cm2/Vs, respectively. key words: polycrystalline-Si, thin-film transistors, gas immersed laser doping, solid-state laser
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عنوان ژورنال:
- IEICE Transactions
دوره 89-C شماره
صفحات -
تاریخ انتشار 2006